1、
Exact 2-D Analytical Model of Ion Implanted Dopant Redistribution During Annealing
在退火过程中离子注入杂质再分布的二维精确解析模型
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2、
Shallow Silicided Junctions Formed by Dopant Redistribution of As~+ and BF_2~+ Implanted into CoSi_2
CoSi2中As~+和BF2~+注入杂质再分布形成硅化物化浅结性能研究
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